Mos Field Effect Transistor

2SK3114 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SK3114

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current. FETs are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity. ©1999, 2001 MOS FIELD EFFECT TRANSISTOR 2SK3435 SWITCHING N-CHANNEL POWER MOS FET DATA SHEET Document No. D14604EJ3V0DS00 (3rd edition) Date Published July 2002 NS CP(K).

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 30 W

Предельно допустимое напряжение сток-исток |Uds|: 600 V

Предельно допустимое напряжение затвор-исток |Ugs|: 30 V

Максимально допустимый постоянный ток стока |Id|: 4 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 6 ns

Выходная емкость (Cd): 115 pf

Сопротивление сток-исток открытого транзистора (Rds): 1.6 Ohm

Silicon integrated mobile phones & portable devices driver download. Тип корпуса: TO-220

2SK3114 Datasheet (PDF)

0.1. 2sk3114b.pdf Size:246K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

0.2. 2sk3114.pdf Size:94K _nec

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3114SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEORDERING INFORMATIONDESCRIPTION The 2SK3114 is N-channel DMOS FET device that features aPART NUMBER PACKAGElow gate charge and excellent switching characteristics, and2SK3114 Isolated TO-220designed for high voltage applications such as switching powersupply, AC adapter.FEATURES

8.1. 2sk3117.pdf Size:260K _toshiba

Download Banktivity. Plans starting at less than $5/month. For macOS Catalina or higher. Banktivity. Banktivity is Better for Proactive Money Management. More robust features than Quicken. Manage all aspects of your finances. Designed exclusively for macOS/iOS. Secure platform only you can access. Try it FREE for 30 days: Download Banktivity. For macOS Catalina or higher.

2SK3117 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3117 Chopper Regulator DC-DC Converter, and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.21 (typ.) High forward transfer admittance : |Y | = 17 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DSS Enhancement-mode : Vth = 2.0~4.0 V (

8.2. 2sk3119.pdf Size:149K _sanyo

Ordering number:ENN6098AN-Channel Silicon MOSFET2SK3119Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A 2.5V drive.[2SK3119]4.51.51.60.40.53 2 10.41.53.0 1 : Gate2 : Drain0.753 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25C

Mac teddy eye pencil. 8.3. 2sk3116b.pdf Size:265K _renesas

8.4. 2sk3115b.pdf Size:264K _renesas

Mos Field Effect Transistor Test

8.5. 2sk3111.pdf Size:75K _nec

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3111SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3111 is N channel MOS FET device thatPART NUMBER PACKAGEfeatures a low on-state resistance and excellent2SK3111 TO-220ABswitching characteristics, and designed for high voltage2SK3111-S TO-262applications such as DC/DC converter, actuator dr

8.6. 2sk3116.pdf Size:70K _nec

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3116SWITCHINGN-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SK3116 is N-channel DMOS FET device that features aPART NUMBER PACKAGElow gate charge and excellent switching characteristics, and2SK3116 TO-220ABdesigned for high voltage applications such as switching power2SK3116-S TO-262supply, AC adapter.2SK3116-ZJ TO-

8.7. 2sk3115.pdf Size:69K _nec

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3115SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, anddesigned for high voltage applications such as switching power supply, AC adapter.ORDERING INFORMATIONFEATURES Low gate charge PART NUMBER PACKAGEQG = 2

8.8. 2sk3110.pdf Size:67K _nec

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3110SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONORDERING INFORMATION The 2SK3110 is N channel MOS FET device that features alow on-state resistance and excellent switching characteristics, PART NUMBER PACKAGEand designed for high voltage applications such as DC/DC2SK3110 Isolated TO-220converter, actuator driver.FEAT

8.9. 2sk310 2sk311.pdf Size:53K _hitachi

8.10. 2sk3113.pdf Size:45K _kexin

Mos Field-effect Transistors (mosfets)

SMD Type ICSMD Type MOSFETMOS Field Effect Transistor2SK3113FeaturesTO-252Unit: mmLow on-state resistance+0.15 +0.16.50-0.15 2.30-0.1RDS(on) =4.4 MAX. (VGS =10 V, ID =1.0 A)5.30+0.2 0.50+0.8-0.2 -0.7Low gate chargeQG = 9 nC TYP. (VDD =450 V, VGS =10 V, ID =2.0 A)0.127Gate voltage rating 30 V0.80+0.1 max-0.1Avalanche capability ratings+0.12.3 0.60-0.1 1G

8.11. 2sk3112.pdf Size:46K _kexin

SMD Type MOSFETMOS Field Effect Transistor2SK3112TO-263Unit: mmFeatures+0.24.57-0.2Gate voltage rating 30 V+0.11.27-0.1Low on-state resistanceRDS(on) = 110m MAX. (VGS =10 V, ID = 13A)Low input capacitance+0.10.1max1.27-0.1Ciss = 1600 pF TYP. (VDS =10V, VGS =0V)+0.1Avalanche capability rated 0.81-0.12.54Built-in gate protection diode1Gate+0.22.54-0

Другие MOSFET.. 2SK2648-01, 2SK2674, 2SK1065, 2SK1358, 2SK2025-01, 2SK2043LS, 2SK3053, 2SK3102-01R, IRFP260M, 2SK2219, 2SK3850, 2SK2857, 2SJ306, 2SJ72, 2SJ670, 2SJ164, 2SJ598.

Mos Field Effect Transistor Sensor

Список транзисторов

Обновления

Mos Tube Field Effect Transistor

Mos Field Effect Transistor Definition

Comments are closed.